DXT5551 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for general purpose applications requiring high breakdown voltages. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo 180 v collector-emitter voltage vceo 160 v emitter-base voltage vebo 6 v collector current ic 500 ma total power dissipation pd 1.2 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 180 - - v ic=100ma collector-emitter breakdown voltage bvceo 160 - - v ic=1ma emitter-base breakdown volatge bvebo 6 - - v ie=10ma collector cutoff current icbo - - 50 na vcb =120v emitter cutoff current iebo - - 50 na veb =4v collector-emitter saturation voltage (1) vce(sat)1 - - 0.15 v ic=10ma, ib=1ma vce(sat)2 - - 0.2 v ic=50ma, ib=5ma base-emitter saturation voltage (1) vbe(sat)1 - - 1 v ic=10ma, ib=1ma vbe(sat)2 - - 1 v ic=50ma, ib=5ma hfe1 80 - - - ic=1ma, vce=5v dc current gain(1) hfe2 80 - 250 - ic=10ma, vce=5v hfe3 30 - - - ic=50ma, vce=5v transition frequency ft 100 - 300 mhz vce =10v, f=100mhz, ic=10ma output capacitance cob - - 6 pf vcb =10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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